GA300TD60U |
RFQ for GA300TD60U Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| GA300TD60U | - | MODULE | - |
Typical Application |
Features |
| • Increased operating efficiency• Direct mounting to heatsink• Performance optimized for power conversion: UPS, SMPS, Welding• Lower EMI, requires less snubbing | • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
| IC @ TC=25°C | Continuous Collector Current | 300 | A |
| ICM | Pulsed Collector Current | 600 | |
| ILM | Clamped Inductive Load Current | 600 | |
| IFM | Peak Diode Forward Current | 600 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 155 | mJ |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | V |
| PD @ TC=25°C | Maximum Power Dissipation | 880 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
460 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
